- Capacitance @ Vr, F：
-
- Current - Reverse Leakage @ Vr：
-
- Operating Temperature - Junction：
-
- Package / Case：
-
- Reverse Recovery Time (trr)：
-
- Supplier Device Package：
-
16 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Vishay | DIODE GEN PURP 100... |
1 |
15,004
In-stock
|
Get Quote | ||
|
|
Vishay | DIODE GEN PURP 100... |
1 |
6,500
In-stock
|
Get Quote | ||
|
|
Taiwan Semiconductor | 25NS, 4A, 100V, ULTRA... |
1 |
5,770
In-stock
|
Get Quote | ||
|
|
Taiwan Semiconductor | 25NS, 4A, 200V, ULTRA... |
1 |
6,000
In-stock
|
Get Quote | ||
|
|
Taiwan Semiconductor | 25NS, 4A, 100V, ULTRA... |
1 |
6,000
In-stock
|
Get Quote | ||
|
|
Taiwan Semiconductor | 25NS, 4A, 200V, ULTRA... |
1 |
4,088
In-stock
|
Get Quote | ||
|
|
Vishay | DIODE GEN PURP 100... |
1 |
1,490
In-stock
|
Get Quote | ||
|
|
Taiwan Semiconductor | 25NS, 4A, 100V, ULTRA... |
1 |
2,895
In-stock
|
Get Quote | ||
|
|
Taiwan Semiconductor | 25NS, 4A, 200V, ULTRA... |
1 |
4,880
In-stock
|
Get Quote | ||
|
|
Vishay | DIODE GEN PURP 200... |
1 |
140
In-stock
|
Get Quote | ||
|
Nexperia | PNE20040EPE/SOT1289B... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Nexperia | PNE20040EPE-Q/SOT128... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Vishay | DIODE GEN PURP 200... |
6,500 |
35,000
In-stock
|
Get Quote | ||
|
|
Vishay | DIODE GEN PURP 200... |
1,500 |
35,000
In-stock
|
Get Quote | ||
|
|
Vishay | DIODE GEN PURP 100... |
6,500 |
35,000
In-stock
|
Get Quote | ||
|
|
Vishay | DIODE GEN PURP 200... |
6,500 |
35,000
In-stock
|
Get Quote |
